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Effect of Electron Irradiation on the Magnetoresistance of InSb
Author(s) -
Euthymiou P. C.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650080113
Subject(s) - irradiation , electron , scattering , annealing (glass) , ionization , electron beam processing , magnetoresistance , hall effect , condensed matter physics , electron mobility , magnetic field , materials science , atomic physics , chemistry , physics , ion , nuclear physics , optics , composite material , organic chemistry , quantum mechanics
Sample of n‐ and p‐type InSb are irradiated by 1 MeV average energy beta‐rays at low temperatures. For the n‐type material the radiation damage results in a small increase in the electron‐concentration. This is not in agreement with other investigations. The Hall mobility is found to decrease as expected. From the resistivities ϱ 0 and ϱ B (without and with a magnetic field) and the concentration n of electrons the constant A of the formula in Wilson's theory is determined. Before irradiation the n‐type sample ( n = 1.047 × 10 15 carriers/cm 3 at T = 78 °K) is found to have A = 0.0376, which indicates mixed scattering. Upon irradiation at 78 °K, A increases to the value 0.0403, which can be explained by the increased importance of the scattering from ionized defects. For p‐type material the radiation damage results in an increase of hole concentration and a decrease in the Hall mobility. This is in agreement with other investigations. Before irradiation the p‐type sample ( p = 4.47 × 10 14 carriers/cm 3 at T = 90 °K) is found to have A = 3.27. This is larger than the largest theoretical value 2.12, calculated for the case where scattering from ionized defects is predominant. Upon irradiation at 78 °K the p‐type sample is found to have A = 4.13. Annealing experiments done on both the crystals show that A tends to return to its initial value.