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The Influence of Indium Doping on the Optical Properties of Cadmium Selenide Crystals
Author(s) -
Rauluszkiewicz J.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650080112
Subject(s) - absorption edge , indium , attenuation coefficient , doping , valence (chemistry) , cadmium selenide , photon energy , band gap , exciton , materials science , absorption (acoustics) , crystal (programming language) , free carrier absorption , extended x ray absorption fine structure , infrared , zinc selenide , condensed matter physics , crystal field theory , optics , chemistry , absorption spectroscopy , photon , optoelectronics , ion , physics , organic chemistry , computer science , quantum dot , composite material , programming language
Abstract The absorption coefficient in In‐doped Cdse crystals is measured in the vicinity of the absorption edge in the temperature range 78 to 373 °K. The absorption coefficient rises exponentially with photon energy according to Urbach's rule. The absorption data are interpreted in terms of optical transitions which produce excitons with phonon cooperation. The free carrier concentrations in doped crystals are determined optically from measurements of the infrared reflectivity. A contraction of the forbidden energy gap of 20% is found with indium doping but the crystal field splitting of the valence band remains unchanged.