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Proton Bombardment Damage in Silicon
Author(s) -
Bubáková R.,
Szmid Z.
Publication year - 1965
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19650080110
Subject(s) - proton , silicon , diamond , irradiation , materials science , crystal structure , crystal (programming language) , diffraction , lattice (music) , atomic physics , zone axis , crystallography , chemistry , physics , nuclear physics , optics , electron diffraction , computer science , acoustics , programming language , metallurgy , composite material
An X‐ray study is made of a single crystal of Si after irradiation by protons of energy ⋍ 6.5 MeV, the total dose being 1 to 2 × 10 18 protons/cm 2 . An increase of the lattice parameter: Δa ⋍ + 3 × 10 −5 Å is observed after bombardment. The atomic planes in the bombarded part of the Si crystal are tilted, making an angle of 1.7″ with planes of the unbombarded part. An imperfection in the diamond‐type structure is found as confirmed by diffraction from the (222) planes.