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Hump Structure in the Characteristics of Sb Doped Ge Tunnel Diodes
Author(s) -
Midvichi I.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640070337
Subject(s) - physics , citation , diode , doping , engineering physics , condensed matter physics , library science , optoelectronics , computer science