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Study of the Reverse Characteristics of Tunnel Diodes Prepared from Sb Doped Ge, in the Region of Indirect Tunnel Current
Author(s) -
Midvichi I.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640070238
Subject(s) - citation , diode , current (fluid) , doping , engineering physics , library science , electrical engineering , physics , optoelectronics , computer science , engineering
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