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Displacement Threshold Energy and Focuson‐Impurity Interaction in Copper near 10 °K
Author(s) -
Kamada K.,
Kazumata Y.,
Suda S.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640070120
Subject(s) - impurity , extrapolation , displacement (psychology) , copper , materials science , atomic physics , electron , electrical resistivity and conductivity , crystallography , chemistry , condensed matter physics , physics , metallurgy , nuclear physics , psychology , mathematical analysis , mathematics , organic chemistry , quantum mechanics , psychotherapist
The increase in resistivity of Cu single crystals oriented near 〈110〉 and 〈111〉 is measured as a function of integrated electron flux at various electron energies below 1 MeV. Specially prepared thin single crystals of about 0.1 mm thickness are used. It is found that the damage production curves thus obtained contain an indirect displacement process which has lower threshold energies than the direct displacement process. The extrapolation of the high energy part of the damage production curve, which involves the direct displacement process only, gives T d = 28 to 30 eV near 〈110〉. A detailed discussion of the interaction of focuson with dislocations and impurity atoms is given, and the indirect displacement process has been attributed to the interaction with impurity atoms.