Premium
Proposal for Semiconductor Laser with Wide‐Gap Emitters
Author(s) -
Pčený T.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640060306
Subject(s) - semiconductor , optoelectronics , band gap , laser , materials science , recombination , inversion (geology) , semiconductor laser theory , optics , physics , chemistry , paleontology , biochemistry , structural basin , gene , biology
An estimate is made of the concentration of injected carriers necessary for inversion in p‐type GaAs, the known band structure being used. It is shown that an N‐ p ‐P structure with two wide‐gap emitters (N and P) can improve the injection efficiency to such an extent that almost whole the current flowing through the laser results in recombination in the inverted region. A system is proposed which, besides employing N‐ p ‐P structure, uses semiinsulating GaAs to reduce the junction area.