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Direct Observation of Dislocations in Silicon Single Crystals Using a White X‐Ray Radiation Technique
Author(s) -
Fiermans L.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640060115
Subject(s) - silicon , burgers vector , x ray , radiation , materials science , dislocation , white (mutation) , optics , crystallography , condensed matter physics , optoelectronics , physics , chemistry , composite material , biochemistry , gene
In this paper a new method is described for the direct observation of dislocations in silicon single crystals. It is based on the use of white X‐ray radiation, and gives, on a single photograph, information about the Burgers vectors of the dislocations.
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