Premium
Local Changes of the Work Function of Germanium and Silicon Due to Dislocations
Author(s) -
Łagowski J.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640050312
Subject(s) - germanium , work function , work (physics) , silicon , condensed matter physics , materials science , function (biology) , enhanced data rates for gsm evolution , surface (topology) , physics , geometry , mathematics , thermodynamics , metal , optoelectronics , metallurgy , computer science , telecommunications , evolutionary biology , biology
Measurements of contact potential difference (c. p. d.) distributions are used to study the influence of dislocations on the work function of germanium and silicon. The results show that dislocations do change the local work function. Changes in work function calculated from Read's [1] theory of edge‐dislocations (assuming that there are no surface states) do not agree with the experimental results. This discrepancy is considered to be due to the influence of the dislocations on the occupation of the surface states.