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Non‐Ohmic Transport in Semiconductors in a Magnetic Field
Author(s) -
Matz D.,
GarciaMoliner F.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640050306
Subject(s) - magnetic field , semiconductor , isotropy , electron , lorentz force , physics , condensed matter physics , ohmic contact , electric field , optics , quantum mechanics , electrode
Shockley's hot electron picture for semiconductors in high electric fields is extended to include arbitrary (though “non‐quantizing”) magnetic fields. The effects are then more diversified and offer wider experimental possibilities. While preserving the original simplicity of Shockley's model, its scope can be extended by including a reduction of the power input due to the deflection caused by the Lorentz force. Explicit calculations are carried out for an idealized isotropic model which Conwell [15] used to interpret the experimental data for n‐Ge in zero magnetic field. This involves interactions of electrons with acoustic and covalent optical modes. This model calculation is designed to illustrate the main physical features of an extended Shockley picture. The results here derived are discussed from the point of view of the planning and analysis of experimental investigations which may bear on the subject.