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Raumladungsbegrenzte Photoströme in dünnen Schichten aus hexagonalem Selen
Author(s) -
Polke M.
Publication year - 1964
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19640050206
Subject(s) - intensity (physics) , materials science , crystallite , light intensity , analytical chemistry (journal) , current (fluid) , atomic physics , optics , chemistry , physics , thermodynamics , chromatography , metallurgy
The dependence of current‐voltage characteristics, and potential distributions, on light intensity is measured at room temperature in thin photoconducting layers of polycrystalline Se. Theoretical calculations of the steady‐state potential distribution of an illuminated metalsemiconductor contact, and mono‐ and bimolecular recombination, agree well with the experimental results. They show that the potential distribution, and therefore the current‐voltage characteristic, are determined solely by the relation between the bulk and boundary concentrations of the one mobile carrier type. By fitting the experimental to the theoretical results, numerical values of carrier concentration p and mobility μ are obtained: μ ∼ 10 −1 cm 2 /Vs, p ranges from 10 11 cm −3 (in the dark) to 10 13 cm −3 (for high intensity illumination). The boundary concentration p A ∼ 10 12 cm −3 at the Se—Au contact was found to be independent of light intensity.