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Growth and Bleaching of the Z 1 Band in KCl Doped with Divalent Impurities
Author(s) -
Cappelletti R.,
Croce L. Dalla,
Fieschi R.
Publication year - 1963
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19630030806
Subject(s) - impurity , doping , saturation (graph theory) , irradiation , valence band , liquid nitrogen , analytical chemistry (journal) , materials science , valence (chemistry) , divalent , chemistry , optoelectronics , band gap , physics , metallurgy , mathematics , organic chemistry , chromatography , combinatorics , nuclear physics
The rate of F and Z 1 center formation by X‐irradiation is studied at different temperatures in doped KCl crystals; at 0°C and at room temperature the slow but fully reproducible, growth of a Z 1 band is found, but this attains only a low saturation value. The results can be interpreted by assuming that the X‐rays have an additional bleaching effect which is stronger for the Z 1 than the F centers. The effects of free holes in the valence band (obtained by optical stimulation of V centres) on these centers is also studied at different temperatures, and the ratio of the capture cross sections for holes, σ h Z /σ h Fis determined, the values ranging from 2.1 (at liquid nitrogen temperature) to 1.5 (at room temperature).