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Internal Field Emission on Germanium Surface at a. c. Field Effect
Author(s) -
Dorda G.
Publication year - 1963
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19630030803
Subject(s) - germanium , oxide , germanium oxide , field (mathematics) , materials science , field electron emission , electron , surface layer , surface states , trap (plumbing) , layer (electronics) , conduction band , penning trap , field effect , surface (topology) , atomic physics , condensed matter physics , optoelectronics , physics , nanotechnology , silicon , metallurgy , meteorology , mathematics , geometry , quantum mechanics , pure mathematics
A study is made of the shift in surface potential φ so , known as the storage effect, observed during studies of the a.c. field effect on etched germanium exposed to the atmosphere. The effect is thought to be due to internal electron field emission from trap‐states in the surface oxide layer into the conduction band of germanium. The kinetics of the electron transition process into the oxide suggests the equivalency of the oxide trap‐states and the so called “slow states”. A qualitative model of these states is discussed.