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On the Theory of Transport Phenomena in Semiconductors in the Presence of Non‐Equilibrium Concentrations
Author(s) -
Zawadzki W.
Publication year - 1963
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19630030606
Subject(s) - einstein relation , diffusion , semiconductor , current (fluid) , physics , magnetic field , condensed matter physics , electrical resistivity and conductivity , electric field , electric current , electronic band structure , classical mechanics , thermodynamics , quantum mechanics , metric (unit) , operations management , economics
The electric current and the heat flux in a semiconductor are computed for an arbitrary spherical energy band‐structure in the presence of electric and magnetic fields, temperature gradients and current‐carrier concentration gradients. The classical transport equation is solved by the McClure‐Kolodziejczak method. The Einstein relation between the diffusion coefficient and the mobility is generalised for the case of arbitrary spherical ϵ( k ) dependence and arbitrary degeneration. The photoelectromagnetic effect and its application for measuring the life‐time of excess carriers; the Dember effect and the photothermomagnetic effect are studied for arbitrary magnetic fields. In the appendix the carrier contribution to thermal‐conductivity is computed. The general case involving many kinds of current carriers is considered. From these formulae the normal expressions can be obtained if parabolic band structure and lack of degeneration is assumed. It is shown that in all the phenomena discussed the deviations of the band structure from the parabolic form should be taken into consideration.