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Radiative Recombination Effects in GaSb Diodes at High Current Densities
Author(s) -
Deutsch T.,
Ellis R. C.,
Warschauer D. M.
Publication year - 1963
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19630030605
Subject(s) - diode , spontaneous emission , current (fluid) , radiative transfer , materials science , optoelectronics , laser , atomic physics , line (geometry) , band gap , recombination , physics , optics , chemistry , biochemistry , geometry , mathematics , gene , thermodynamics
Forward biased GaSb diodes made by diffusing zinc into n‐type GaSb show emission lines at 0.72 eV or 0.78 eV at 77 °K. At current densities of approximately 60000 A cm −2 a diode showing a d.c. emission at 0.72 eV radiates mainly at 0.78 eV. Some narrowing of the 0.72 eV line has been seen. A model to explain the observed effects in terms of the band structure of GaSb is presented and some implications of the band structure for possible laser action are discussed.