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Dislocations and wide stacking faults in wurtzite type crystals: Zinc sulfide and aluminium nitride
Author(s) -
Blank H.,
Delavignette P.,
Amelinckx S.
Publication year - 1962
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19620021204
Subject(s) - wurtzite crystal structure , stacking , materials science , crystallography , transmission electron microscopy , zinc sulfide , stacking fault , hexagonal crystal system , aluminium , dislocation , zinc , composite material , chemistry , nanotechnology , metallurgy , organic chemistry
Vapour grown ZnS and AlN crystals of wurtzite structure are studied by transmission electron microscopy. The habit plane of the ZnS crystals is 〈11 2 0〉 and that of AIN (0001). The stacking fault energy is negative in hexagonal ZnS and positive in AlN at 20 °C so that different patterns of dislocations and stacking faults are observed in the two wurtzite structures. In ZnS stacking faults in prism planes are found which show some uncommon properties.