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Contact potential difference measurements on real semiconductor surfaces by means of a point vibrating electrode
Author(s) -
Sochański J.
Publication year - 1962
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19620021010
Subject(s) - voltage drop , potential difference , conductance , semiconductor , germanium , electrode , electric potential , materials science , depletion region , drop (telecommunication) , oxide , electrode potential , voltage , chemistry , condensed matter physics , analytical chemistry (journal) , optoelectronics , electrical engineering , physics , silicon , engineering , electrochemistry , environmental chemistry , metallurgy
Changes of contact potential are observed in inversion layers induced in germanium by applying a reverse bias voltage in the vicinity of a p‐n junction. Comparison is made with changes of surface potential calculated from simultaneous measurements of channel conductance. Agreement is good, showing that, under certain conditions, changes in the potential drop through the oxide layer can be neglected.