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Lattice constants and thermal expansion of silicon up to 900 °C by X‐ray method
Author(s) -
Dutta B. N.
Publication year - 1962
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19620020803
Subject(s) - thermal expansion , silicon , x ray , lattice constant , materials science , thermal , lattice (music) , thermodynamics , crystallography , condensed matter physics , composite material , chemistry , physics , metallurgy , optics , diffraction , acoustics
Abstract A detailed study of the thermal expansion of silicon is made using an X‐ray powder technique, between room temperature and 900 °C. The values only agree with those of MAISSEL below 700 °C, the present values being higher above this temperature. It is found that Grüneisen's two‐constant formula cannot fit the present results.