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The electrical resistivity of stacking faults
Author(s) -
Seeger A.,
Statz H.
Publication year - 1962
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19620020707
Subject(s) - stacking , wannier function , scattering , electron , reflection (computer programming) , fermi surface , condensed matter physics , stacking fault , computation , plane (geometry) , physics , wave function , electrical resistivity and conductivity , computational physics , quantum mechanics , geometry , mathematics , computer science , nuclear magnetic resonance , algorithm , programming language
A one‐electron theory of the scattering of electrons from infinitely extended stacking faults in f. c. c. metals is given for an arbitrarily shaped Fermi surface. The corresponding linearised transport problem is then solved without approximation. The wave functions are represented by expansions in terms of Wannier functions. The method could be used for a self‐consistent calculation of the potential of a stacking fault, and extended to related problems of plane interfaces. The scattering of electrons from the stacking fault is expressed in terms of a generalised reflection coefficient R . The dependence of R on the wave‐vector of the incident electrons is studied for a Fermi surface of the type typical of noble metals, certain simplifying assumptions concerning the number of matrix elements between Wannier functions being made. The average R is found to be relatively large, which agrees with experiment and earlier theoretical estimates. Detailed numerical computations for specific metals, and the application of the method to the calculation of stacking fault energies, will be published elsewhere.