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Thermomagnetic effects in semiconductors
Author(s) -
Zawadzki Włodzimierz
Publication year - 1962
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19620020404
Subject(s) - thermomagnetic convection , degenerate energy levels , condensed matter physics , adiabatic process , semiconductor , isothermal process , thermoelectric effect , degenerate semiconductor , physics , thermal conductivity , materials science , thermodynamics , magnetic field , quantum mechanics
The thermomagnetic effects in semiconductors with an arbitrary spherical ϵ( k ) dependence have been studied theoretically. Expressions are for: the' contribution of the free carriers to the heat conductivity; the isothermal Maggi‐Righi‐Leduc effect; the adiabatic Maggi‐Righi‐Leduc effect; the Righi‐Leduc effect; the Ettingshausen effect; the Thomson effect and the Peltier effect, in the two cases of weak and strong magnetic fields and for different scattering mechanisms. For the contribution of the free carriers to the heat conductivity and for the Thomson and Peltier effects the general case of many kinds of carriers has been studied. From the obtained formulas, on the simplifying assumption of the parabolic energy band structure, the formerly known expressions have been obtained, which describe the above mentioned effects for the non‐degenerate, degenerate and the strongly degenerate case. The influence of deviations from a parabolic band structure on these effects has been discussed for the degenerate case. It has been shown that these deviations should be taken into consideration.