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The effects of dried O 2 on the surface conductance of silicon
Author(s) -
Einspruch N. G.
Publication year - 1962
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19620020207
Subject(s) - conductance , silicon , analytical chemistry (journal) , electric field , materials science , oxygen , surface charge , field effect , chemistry , condensed matter physics , optoelectronics , physics , chromatography , organic chemistry , quantum mechanics
In order to evaluate the effects of dried oxygen on the electrical transport properties of the silicon surface, ac field effect measurements on a CP‐4 etched surface have been made. The equilibrium surface potential of a sample stored in room air undergoes a 12 mv p‐type shift upon exposure to dried O 2 . The field effect mobility changes from 0.11 (n‐type) to 0.19 (p‐type) cm 2 /volt sec. After the sample is exposed to dried O 2 , the applied electric field produces a total variation of the charge trapped in the surface states of 22mμ coul/cm 2 with a corresponding variation in surface potential of 0.75 ( e φ / k T units).