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Characterization of Ultrathin FDSOI Stacks Using Low‐Field Mobility
Author(s) -
Mchedlidze Teimuraz,
Schmid Alexander,
Heitmann Johannes
Publication year - 2022
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202200133
Subject(s) - materials science , stack (abstract data type) , optoelectronics , dielectric , fabrication , silicon on insulator , electron mobility , field effect transistor , electronic engineering , high κ dielectric , transistor , characterization (materials science) , voltage , gate dielectric , electrical engineering , silicon , computer science , nanotechnology , engineering , programming language , medicine , alternative medicine , pathology
Herein, a method for the electrical characterization of a fully depleted silicon‐on‐insulator (FDSOI) high‐k dielectric‐metal‐gate stack is proposed. The method is based on assessing low‐field mobility in FDSOI field‐effect transistor (FET) from current–voltage measurements at various temperatures in the gate voltage range up to strong inversion. In addition to assessing the value of the low‐field mobility for the stack itself, it allows specifying the impact of various carrier‐scattering mechanisms on the total stack mobility. Further, the application of double‐gate operation in the optimal coupling mode for the FET allows analysis of the impact of the gate interfaces on mobility. The method can be used in the monitoring of stack quality and in the design and development of stack fabrication processes.