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Coulomb Drag by Injected Ballistic Carriers in Graphene n + −i−n−n + Structures: Doping and Temperature Effects
Author(s) -
Ryzhii Victor,
Otsuji Taichi,
Ryzhii Maxim,
Mitin Vladimir,
Shur Michael S.
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202170059
Subject(s) - graphene , drag , electron , terahertz radiation , filamentation , coulomb , physics , diode , condensed matter physics , atomic physics , ballistic conduction , materials science , optoelectronics , nanotechnology , plasma , quantum mechanics , mechanics
Carrier Drags Dirac dispersion law in graphene enables the Coulomb drag of quasi equilibrium electrons by injected ballistic electrons. The drag effect determines the shape of the current–voltage characteristics (monotonous or S‐shaped). The S‐shaped characteristics enable switching, current filamentation and negative differential resistance at terahertz frequencies. The applications of these new effects include voltage limiting, switching, terahertz detection, amplification and generation, and novel circuit solutions integrating the S‐type graphene switches with conventional graphene transistors and diodes. More details can be found in article number 2100535 by Victor Ryzhii and co‐workers.