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The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors
Author(s) -
Nam Sooji,
Lee Su-Jae,
Pi Jae-Eun,
Yang Jong-Heon,
Hwang Chi-Sun,
Cho Sung Haeng
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202170052
Subject(s) - materials science , oxide , thin film transistor , transistor , tin oxide , fabrication , metal , optoelectronics , equivalent oxide thickness , realization (probability) , electronic circuit , nanotechnology , doping , electrical engineering , gate oxide , metallurgy , layer (electronics) , voltage , engineering , medicine , alternative medicine , pathology , statistics , mathematics
p‐Type Metal‐Oxide Transistors In article number 2100267 by Sung Haeng Cho and co‐workers, a facile route for the fabrication of solution‐processed high‐performance p‐type metal‐oxide thin film transistors is developed using potassium‐doped SnO (K‐SnO). This development of high‐performance p‐type metal‐oxide semiconductors comparable to n‐type ones opens a new window for the realization of transparent, flexible, and low‐power integrated circuits in large area electronics.