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Impact of Deposition Temperature on Crystal Structure and Ferroelectric Properties of (Al 1− x Sc x )N Films Prepared by Sputtering Method
Author(s) -
Yasuoka Shinnosuke,
Shimizu Takao,
Tateyama Akinori,
Uehara Masato,
Yamada Hiroshi,
Akiyama Morito,
Funakubo Hiroshi
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202170049
Subject(s) - ferroelectricity , materials science , hysteresis , deposition (geology) , crystal structure , sputtering , polarization (electrochemistry) , crystallography , doping , thin film , crystal (programming language) , condensed matter physics , nanotechnology , optoelectronics , dielectric , chemistry , physics , paleontology , sediment , computer science , programming language , biology
Switchable Ferroelectric (Al 1−x Sc x )N Films In article number 2100302 by Hiroshi Funakubo and co‐workers, the deposition temperature dependence of the crystal structure and ferroelectricity for Sc‐doped AlN [(Al 0.78 Sc 0.22 )N] films is investigated. The background of the cover image is the XRD 2 θ ‐Ψ mapping of AlScN films. Two crystal structures show polarization switching models of AlScN. P‐E hysteresis response is ascertained for films deposited without heating substrates.