A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Silicon-on-Insulator-Based Photodetectors In article number 2000751 , Jian Liu, Sorin Cristoloveanu, and Jing Wan selectively review the recent progress of the silicon‐on‐insulator based photodetectors from the viewpoint of operation principles and performances. The cover image shows the main contents through the typical work, including the typical high‐speed photodiodes with PIN structure, photodetectors owning superior functionalities, photodetectors with novel operating mechanism and high internal gain, and the most compact active pixel sensors on SOI. The review provides the comparison between different photodetectors, summarizes the advantages and disadvantages of the technologies and put forward the corresponding prospects.