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Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System
Author(s) -
Sun Shaoyu,
Zhang Jianshan,
Xia Ling,
Wu Wengang,
Wang Jinyan,
Jin Yufeng
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202170016
Subject(s) - wireless power transfer , reliability (semiconductor) , schematic , wireless , electrical engineering , power semiconductor device , power (physics) , waveform , computer science , distortion (music) , transistor , electronic engineering , materials science , engineering , physics , voltage , telecommunications , amplifier , cmos , quantum mechanics
Wireless Power Transfer In article number 2000565 by Yufeng Jin and co‐workers the reliability of GaN device in wireless power transfer system is studied. The wireless power transfer system module is at the bottom left of the picture. The authors study the reliability of the device in the system from two directions, device‐level and circuit‐level. The GaN device’s structure is shown at bottom right of the cover image. In the small circle is the band structure of the device, which reflects the cause of the reliability issues (such as trap, tunneling). Upper of the picture is the schematic diagram of the wireless power transfer. According to adjust the operation condition of the system, the reliability of the device can be improved.