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Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer
Author(s) -
Moench Stefan,
Müller Stefan,
Reiner Richard,
Waltereit Patrick,
Czap Heiko,
Basler Michael,
Hückelheim Jan,
Kirste Lutz,
Kallfass Ingmar,
Quay Rüdiger,
Ambacher Oliver
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202170014
Subject(s) - superlattice , materials science , optoelectronics , buffer (optical fiber) , epitaxy , voltage , lattice (music) , electrical engineering , nanotechnology , layer (electronics) , physics , engineering , acoustics
Semiconductor Superlattices The picture shows a monolithic power converter, fabricated in a lateral AlGaN/GaN‐on‐Si process on an improved AlN/GaN super‐lattice buffer epitaxy. The super‐lattice reduces vertical leakage and back‐gating effects compared to step‐graded buffers. This improved integration technology allows 98.8% efficient dc‐dc conversion on a single chip. More details can be found in article number 2000404 by Stefan Moench and co‐workers.