Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaO  x   in Pt/Ta 2 O 5 /Ti Device Stacks | Zendy

Jin Soeun | Zendy; Lee Donguk | Zendy; Kwak Myonghoon | Zendy; Kim Ah Ra | Zendy; Hwang Hyunsang | Zendy; Cheon Hyuknyeong | Zendy; Kwon Jung-Dae | Zendy; Kim Yonghun | Zendy

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Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaO x in Pt/Ta 2 O 5 /Ti Device Stacks

Author(s) -

Jin Soeun,

Lee Donguk,

Kwak Myonghoon,

Kim Ah Ra,

Hwang Hyunsang,

Cheon Hyuknyeong,

Kwon Jung-Dae,

Kim Yonghun

Publication year - 2021

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.202170012

Subject(s) - neuromorphic engineering , mnist database , nanoclusters , atomic layer deposition , materials science , resistive touchscreen , modulation (music) , synaptic weight , embedding , optoelectronics , resistive random access memory , nanotechnology , computer science , voltage , layer (electronics) , physics , artificial neural network , electrical engineering , artificial intelligence , engineering , acoustics , computer vision

Neuromorphic Synaptic Devices In article number 2000534 , Jung‐Dae Kwon, Yonghun Kim, and co‐workers report a reliable Ta 2 O 5 ‐based resistive synaptic device inserted with sub‐TaOx nanoclusters, enabling that the concentration of nanoclusters is precisely controlled using plasma enhanced atomic layer deposition (PE‐ALD). As a result, the MNIST pattern recognition accuracy improves by 11.45%, which can demonstrate highly reliable analog synaptic devices for neuromorphic hardware systems.

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