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Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb 2 S 3 Solar Cells
Author(s) -
Liu Xingyun,
Feng Zitong,
Sun Yuxia,
Su Mingzhu,
Liu Ying,
Liu Haiqiang,
Wen Jian,
Liu Hongri
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100337
Subject(s) - materials science , spin coating , annealing (glass) , layer (electronics) , optoelectronics , solar cell , scanning electron microscope , energy conversion efficiency , thin film , nanoparticle , buffer (optical fiber) , nanotechnology , hydrothermal circulation , chemical engineering , composite material , telecommunications , computer science , engineering
Nanostructured CdS thin films are fabricated by a simple spin‐coating method at various annealing temperatures from 200 to 350 °C. CdS films of 80 nm thick, which are composed of nanoparticles or flakes with size ≈20–200 nm, are obtained. The nanostructured morphology is identified by scanning electron microscopy measurement. Sb 2 S 3 films with large‐sized grains are deposited on the CdS thin films with hydrothermal method, in which CdS is adopted as electron transport layer (ETL) for Sb 2 S 3 solar cells. The power conversion efficiency (PCE) is 4.88% for the best solar cell based on nanostructured CdS ETLs. Herein, a very facile and effective route to fabricate nanostructured CdS buffer layer for Sb 2 S 3 solar cells is offered.