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The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors
Author(s) -
Nam Sooji,
Lee Su-Jae,
Pi Jae-Eun,
Yang Jong-Heon,
Hwang Chi-Sun,
Cho Sung Haeng
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100267
Subject(s) - materials science , thin film transistor , oxide , tin oxide , equivalent oxide thickness , tin , fabrication , transistor , metal , doping , optoelectronics , thin film , phase (matter) , nanotechnology , layer (electronics) , electrical engineering , metallurgy , gate oxide , chemistry , voltage , medicine , alternative medicine , engineering , organic chemistry , pathology
Developing high‐performance p‐type metal‐oxide semiconductors comparable to n‐type ones has opened a new window for the realization of transparent, flexible, and low‐power integrated circuits in large‐area electronics. Herein, the fabrication of solution‐processed p‐type metal‐oxide thin‐film transistors (TFTs) with excellent device performance at low temperatures using a novel material is reported. Potassium (K) content is introduced into the tin oxide precursor solution to stabilize the tin (II) oxide (SnO) phase rather than the tin (IV) oxide (SnO 2 ) phase during thin‐film formation. The optimized K‐doped SnO (K‐SnO) TFTs exhibit outstanding electrical performance, with a maximum Hall mobility of 51 cm 2 V −1 s −1 and a field‐effect hole mobility of 2.3 cm 2 V −1 s −1 . The achievement of the solution‐processed K‐SnO TFTs not only provides a significant step toward the development of complementary metal‐oxide semiconductor circuits, but also represents a feasible approach for low‐cost flexible p‐type metal‐oxide electronics.