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Hydrogen‐Related Defects in Insulators
Author(s) -
Kolkovsky Vladimir
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100213
Subject(s) - hydrogen , amorphous solid , plasma , materials science , chemistry , crystallography , physics , nuclear physics , organic chemistry
It is shown that the introduction of hydrogen by a dc H plasma treatment leads to the appearance of negatively charged defects in amorphous Al 2 O 3 and SiO 2 and positively charged defects in amorphous HfO 2 . The concentration of the defects increases with increasing temperature of the dc H plasma treatment between 50 and 100 °C, and the defects appear in all samples independently on their growth conditions and the thickness of the insulators. The origin of the defects is discussed with an emphasis on the existence of interstitial hydrogen in the insulators.