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Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate
Author(s) -
Chen Jun,
Yi Wei,
Ito Shun,
Sekiguchi Takashi
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100175
Subject(s) - cathodoluminescence , stacking , materials science , monochromatic color , transmission electron microscopy , substrate (aquarium) , luminescence , stacking fault , enhanced data rates for gsm evolution , optoelectronics , crystallography , dislocation , molecular physics , optics , composite material , chemistry , nanotechnology , geology , physics , telecommunications , oceanography , organic chemistry , computer science
The extended defects in m ‐plane seed‐grown GaN substrate have been investigated by cathodoluminescence (CL) and transmission electron microscopy (TEM). The presence of basal‐plane stacking faults (BSFs) has been confirmed in the edge part of seed growth. The luminescence features of BSFs are characterized by high‐resolution CL with monochromatic image and spatially resolved spectral analysis. Most stacking faults are intrinsic I 1 BSFs with characteristic emission peak centered at 3.42 eV. There are a few intrinsic I 2 BSFs which show varied emission energies of 3.33–3.38 eV. The motion of dislocations under electron beam irradiation has also been monitored and the correlation with stacking faults is discussed.