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Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications
Author(s) -
Jia Yeting,
Wang Quan,
Chen Changxi,
Feng Chun,
Li Wei,
Jiang Lijuan,
Xiao Hongling,
Wang Qian,
Xu Xiangang,
Wang Xiaoliang
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100151
Subject(s) - high electron mobility transistor , transconductance , linearity , materials science , transistor , optoelectronics , metal gate , threshold voltage , voltage , electrical engineering , gate oxide , engineering
This article proposes a parallel dual‐metal‐gate structure (PDM) of AlGaN/GaN high‐electron‐mobility transistors (HEMTs) for high‐linearity applications. Cancellation of the third‐order derivative of theI ds – V gscurve ( g m ″ ) is achieved by splitting the device into two subcells in parallel with different gate metals. The two subcells have different threshold voltages. When the same bias voltageV gsis applied, the operating states of the two subcells are independently controlled by the gate bias voltages. The maximum transconductance ( g m , peak) of the conventional single‐metal‐gate (SMG) HEMT, double‐metal‐gate (DMG) HEMT, and PDM‐HEMT is all comparable, whereasg m ″of the proposed structure is 75% lower than that of the SMG HEMT and 47.8% lower than that of the DMG HEMT. The effects of the differences and width ratios of the work function ong m ″are studied and compared, and a suitably designed PDM‐HEMT that can considerably improve linearity without degrading other performance aspects is obtained. This research has significant implications for high‐linearity applications.