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High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing
Author(s) -
Sakurai Yuya,
Ueno Kohei,
Kobayashi Atsushi,
Uesugi Kenjiro,
Miyake Hideto,
Fujioka Hiroshi
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100074
Subject(s) - materials science , sapphire , annealing (glass) , dislocation , optoelectronics , epitaxy , sputtering , electron mobility , ultraviolet , diode , fabrication , doping , light emitting diode , thin film , composite material , optics , nanotechnology , laser , medicine , physics , alternative medicine , layer (electronics) , pathology
The formation of high‐quality n‐type AlN with a dislocation density of 2.8 × 10 8 cm −2 on sapphire (0001) using pulsed sputtering deposition (PSD) and high‐temperature (HT) annealing is demonstrated. The surface morphology of PSD‐grown AlN on AlN templates prepared by HT annealing consists of an ordered stepped‐and‐terraced structure with a step height of 1 ML. Si‐doped AlN on the HT‐annealed AlN template yields the high electron mobility of 141 cm 2 V −1 s −1 at room temperature, which is attributed to the reduction in the dislocation density and compensating centers. These results indicate that the PSD is a promising epitaxial technique for the fabrication of ultraviolet (UV) light‐emitting diodes (LEDs) and future power devices.