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Silver Antimony Sulfide Selenide Thin‐Film Solar Cells via Chemical Deposition
Author(s) -
Capistrán-Martínez Jesús,
Nair M. T. Santhamma,
Nair P. Karunakaran
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100058
Subject(s) - antimony , selenide , solar cell , chemical bath deposition , band gap , sulfide , materials science , analytical chemistry (journal) , photoconductivity , thin film , amorphous solid , open circuit voltage , lead sulfide , short circuit , copper indium gallium selenide solar cells , current density , selenium , chemistry , optoelectronics , crystallography , nanotechnology , metallurgy , quantum dot , chromatography , quantum mechanics , physics , voltage
Silver antimony sulfide selenide (AgSbS 1.3 Se 0.7 ) thin film forms from silver antimony sulfide (AgSbS 2 , 700 nm) and amorphous selenium (Se, 300 nm), both obtained via chemical deposition and heated in contact at 180 °C for 30 min in an argon ambient. The face‐centered cubic (fcc) structure of AgSbS 2 (cuboargyrite) is maintained in AgSbS 1.3 Se 0.7 . The optical bandgap of 1.8 eV (direct forbidden) in AgSbS 2 reduces to 1.47 eV in AgSbS 1.3 Se 0.7 with an increase in the light‐generated current density from 19 to 29 mA cm −2 . The photoconductivity in AgSbS 1.3 Se 0.7 of 2 × 10 −5  Ω −1  cm −1 is an order of magnitude higher than that in AgSbS 2 . A solar cell of SnO 2 :F/CdS(80 nm)/AgSbS 1.3 Se 0.7 (700 nm)/C‐Ag, produced by heating at 280 °C with the graphite (C) electrode applied, shows a conversion efficiency ( η ) of 0.65%, open‐circuit voltage ( V oc ) of 0.537 V, short‐circuit current density ( J sc ) of 2.07 mA cm −2 , and fill factor of 0.60. In AgSbS 2 solar cell, η is of 0.54% with a V oc of 0.625 V. The merits of AgSbS 1.3 Se 0.7 as a solar cell absorber and ways to increase the J sc in the AgSbS 1.3 Se 0.7 solar cell to match its J L are discussed.

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