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Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga 2 Te 3 Thin Films
Author(s) -
Lee Dayoon,
Kim Taeho,
Kim Jaeyeon,
Sohn Hyunchul
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070066
Subject(s) - materials science , doping , amorphous solid , threshold voltage , thin film , thermal stability , optoelectronics , switching time , voltage , nanotechnology , electrical engineering , crystallography , chemical engineering , chemistry , engineering , transistor
Ovonic Threshold Switching The modulation of ovonic threshold switching (OTS) characteristics is required in a cross‐point array structure. Therefore, the effect of Zr doping on the amorphous Ga 2 Te 3 having OTS characteristics is examined. Consequently, the thermal stability of the Zr‐doped Ga 2 Te 3 is improved and the threshold and holding voltages are increased with the increasing Zr doping concentration. More details can be found in article number 2000623 by Hyunchul Sohn and co‐workers.