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Anisotropy and Mechanistic Elucidation of Wet‐Chemical Gallium Nitride Etching at the Atomic Level
Author(s) -
Tautz Markus,
Weimar Andreas,
Graßl Christian,
Welzel Martin,
Díaz Díaz David
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070060
Subject(s) - etching (microfabrication) , gallium nitride , gallium , hydroxide , crystal (programming language) , anisotropy , materials science , isotropic etching , nitride , diode , nanotechnology , crystallography , chemistry , optoelectronics , inorganic chemistry , metallurgy , optics , layer (electronics) , physics , computer science , programming language
Etching Gallium nitride is the key material of blue and white light‐emitting diodes. This study elucidates the molecular reaction mechanism occurring during etching. The established concept of hydroxide repulsion by surface‐standing NH and NH 2 groups is extended to explain the etch behaviors of the most important crystal facets. More details can be found in article number 2000221 by David Díaz Díaz and co‐workers.