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Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry
Author(s) -
Kramer Noah J.,
Voss Lars F.,
Conway Adam M.,
Grivickas Paulius V.,
Bora Mihail,
Hall David L.,
Caruso Anthony N.
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070058
Subject(s) - attenuation coefficient , absorption (acoustics) , doping , total internal reflection , geometry , materials science , reflection (computer programming) , optics , vanadium , row , optoelectronics , physics , mathematics , computer science , metallurgy , database , programming language
Optoelectronics This image shows an illustration of the light trapping geometry used to capture low absorbing light used to identify the relative efficiency of different low absorption coefficient photo‐absorption pathways for SiC:V with varying co‐doping, shown for the cases considered in the middle and bottom rows. More details can be found in article number 2000315 by Lars F. Voss and co‐workers.