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Improving the Passivation of Molybdenum Oxide Hole‐Selective Contacts with 1 nm Hydrogenated Aluminum Oxide Films for Silicon Solar Cells
Author(s) -
Gregory Geoffrey,
Feit Corbin,
Gao Zhengning,
Banerjee Parag,
Jurca Titel,
Davis Kristopher O.
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070046
Subject(s) - passivation , materials science , silicon , layer (electronics) , atomic layer deposition , oxide , optoelectronics , molybdenum , oxide thin film transistor , monolayer , aluminium , hydrogen , nanotechnology , inorganic chemistry , metallurgy , chemistry , thin film transistor , organic chemistry
Silicon Solar Cells Precisely inserting hydrogen in few monolayer aluminum oxide passivation layer during atomic layer deposition (ALD) can lead to carrier lifetimes of over one millisecond. Coupling this layer with an ALD hole‐selective molybdenum oxide film results in a low resistivity, fully transparent, passivating hole contact. This film stack can be integrated in highly efficient silicon solar cells. More details can be found in article number 2000093 by Kristopher O. Davis and co‐workers.