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Emission Properties of GaN Planar Hexagonal Microcavities
Author(s) -
Pozina Galia,
Hemmingsson Carl,
Belonovskii Alexei V.,
Levitskii Iaroslav V.,
Mitrofanov Maxim I.,
Girshova Elizaveta I.,
Ivanov Konstantin A.,
Rodin Sergey N.,
Morozov Konstantin M.,
Evtikhiev Vadim P.,
Kaliteevski Mikhail A.
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070044
Subject(s) - planar , hexagonal crystal system , materials science , exciton , epitaxy , metalorganic vapour phase epitaxy , optoelectronics , ideal (ethics) , vapor phase , condensed matter physics , nanotechnology , crystallography , chemistry , physics , computer science , philosophy , computer graphics (images) , epistemology , layer (electronics) , thermodynamics
Planar Hexagonal Microcavities GaN planar hexagonal microcavities are fabricated using a selective area metal‐organic vapor phase epitaxy. The almost ideal geometric shape of the hexagons allows to observe different cavity modes, some of which can interact with the GaN exciton leading to a strong modification of exciton emission. The design of such microstructures is a way to increase emission efficiency in III‐N microcavities. More details can be found in article number 1900894 by Galia Pozina and co‐workers.