Hybrid Passivation for Foldable Indium Gallium Zinc Oxide Thin‐Film Transistors Mediated by Low‐Temperature and Low‐Damage Parylene‐C/Atomic Layer Deposition‐AlO  x   Coating | Zendy

Zhan Shijie | Zendy; Han Soodeok | Zendy; Bang Sang Yun | Zendy; Li Benxuan | Zendy; Chun Young Tea | Zendy; Hou Bo | Zendy; Kim Jong Min | Zendy

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Hybrid Passivation for Foldable Indium Gallium Zinc Oxide Thin‐Film Transistors Mediated by Low‐Temperature and Low‐Damage Parylene‐C/Atomic Layer Deposition‐AlO x Coating

Author(s) -

Zhan Shijie,

Han Soodeok,

Bang Sang Yun,

Li Benxuan,

Chun Young Tea,

Hou Bo,

Kim Jong Min

Publication year - 2020

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.202070040

Subject(s) - passivation , materials science , atomic layer deposition , thin film transistor , layer (electronics) , optoelectronics , parylene , deposition (geology) , coating , indium , zinc , transistor , gallium , thin film , nanotechnology , composite material , metallurgy , polymer , electrical engineering , paleontology , engineering , voltage , sediment , biology

Thin‐Film Transistors In article number 1900832 by Shijie Zhan, Bo Hou, and co‐workers, a parylene‐C/AlO x hybrid passivation approach is introduced to reduce the damage during AlO x atomic layer deposition. This method enables a flexible transistor backplane matrix with remarkably improved bias stability.

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