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Hybrid Passivation for Foldable Indium Gallium Zinc Oxide Thin‐Film Transistors Mediated by Low‐Temperature and Low‐Damage Parylene‐C/Atomic Layer Deposition‐AlO x Coating
Author(s) -
Zhan Shijie,
Han Soodeok,
Bang Sang Yun,
Li Benxuan,
Chun Young Tea,
Hou Bo,
Kim Jong Min
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070040
Subject(s) - passivation , materials science , atomic layer deposition , thin film transistor , layer (electronics) , optoelectronics , parylene , deposition (geology) , coating , indium , zinc , transistor , gallium , thin film , nanotechnology , composite material , metallurgy , polymer , electrical engineering , paleontology , engineering , voltage , sediment , biology
Thin‐Film Transistors In article number 1900832 by Shijie Zhan, Bo Hou, and co‐workers, a parylene‐C/AlO x hybrid passivation approach is introduced to reduce the damage during AlO x atomic layer deposition. This method enables a flexible transistor backplane matrix with remarkably improved bias stability.