Premium
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Author(s) -
Lehninger David,
Olivo Ricardo,
Ali Tarek,
Lederer Maximilian,
Kämpfe Thomas,
Mart Clemens,
Biedermann Kati,
Kühnel Kati,
Roy Lisa,
Kalkani Mahsa,
Seidel Konrad
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070030
Subject(s) - hafnium , materials science , zirconium , annealing (glass) , ferroelectricity , amorphous solid , optoelectronics , fabrication , oxide , back end of line , metallurgy , chemistry , medicine , alternative medicine , organic chemistry , pathology , dielectric
Hafnium Zirconium Oxide Films So far, the ferroelectric phase of prior amorphous hafnium zirconium oxide (HZO) films is achieved by using rapid thermal annealing. In article number 1900840 by David Lehninger and co‐workers, it is shown that a dedicated annealing step is not needed for the integration of ferroelectric HZO films into the back‐end‐of‐line of integrated circuits. A furnace anneal given by the thermal budget during interconnect‐formation is sufficient to functionalize even ultrathin 5 nm HZO films. This result will help to optimize the integration flow, which saves process time and fabrication costs.