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The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching
Author(s) -
Morozov Ivan,
Gudovskikh Alexander,
Uvarov Alexander,
Baranov Artem,
Sivakov Vladimir,
Kudryashov Dmitri
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070017
Subject(s) - silicon , etching (microfabrication) , dry etching , materials science , lithography , silicon oxide , optoelectronics , nanotechnology , reactive ion etching , layer (electronics) , silicon nitride
Cryogenic Etching In article number 1900535 , Ivan Morozov and co‐workers present a way to obtain an array of ordered silicon structures using nanosphere lithography and cryogenic etching. The developed technology of cryogenic etch throw silicon oxide mask allows one to obtain a highly ordered array of vertically aligned silicon structures on the entire surface of four inches silicon substrates.