Revelation of Dislocations in β‐Ga 2 O 3  Substrates Grown by Edge‐Defined Film‐Fed Growth | Zendy

Yao Yongzhao | Zendy; Ishikawa Yukari | Zendy; Sugawara Yoshihiro | Zendy

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Revelation of Dislocations in β‐Ga 2 O 3 Substrates Grown by Edge‐Defined Film‐Fed Growth

Author(s) -

Yao Yongzhao,

Ishikawa Yukari,

Sugawara Yoshihiro

Publication year - 2020

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.202070016

Subject(s) - schematic , isotropic etching , etching (microfabrication) , crystallography , enhanced data rates for gsm evolution , synchrotron , orientation (vector space) , materials science , crystal growth , crystal (programming language) , dislocation , optics , chemistry , geometry , physics , nanotechnology , computer science , engineering , mathematics , layer (electronics) , programming language , telecommunications , electronic engineering

Chemical Etching This figure is a schematic drawing of the experimental setup and principle of the synchrotron X‐ray topography used for the observation of dislocations in β‐Ga 2 O 3 crystal. Two types of surface orientation of the samples are indicated in the crystal structure of β‐Ga 2 O 3 visualized by VESTA software. More details can be found in article number 1900630 by Yongzhao Yao and co‐workers.

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