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Revelation of Dislocations in β‐Ga 2 O 3 Substrates Grown by Edge‐Defined Film‐Fed Growth
Author(s) -
Yao Yongzhao,
Ishikawa Yukari,
Sugawara Yoshihiro
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202070016
Subject(s) - schematic , isotropic etching , etching (microfabrication) , crystallography , materials science , crystal (programming language) , enhanced data rates for gsm evolution , synchrotron , crystal growth , orientation (vector space) , revelation , optoelectronics , optics , geometry , chemistry , physics , nanotechnology , computer science , art , engineering , electrical engineering , artificial intelligence , layer (electronics) , mathematics , programming language , literature
Chemical Etching This figure is a schematic drawing of the experimental setup and principle of the synchrotron X‐ray topography used for the observation of dislocations in β‐Ga 2 O 3 crystal. Two types of surface orientation of the samples are indicated in the crystal structure of β‐Ga 2 O 3 visualized by VESTA software. More details can be found in article number 1900630 by Yongzhao Yao and co‐workers.