Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO 2 /Si Substrate | Zendy

Han Xu | Zendy; Tsushima Koki | Zendy; Shirai Takuto | Zendy; Ishizaki Takahiro | Zendy; Shimomura Kazuhiko | Zendy

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Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO 2 /Si Substrate

Author(s) -

Han Xu,

Tsushima Koki,

Shirai Takuto,

Ishizaki Takahiro,

Shimomura Kazuhiko

Publication year - 2021

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.202000767

Subject(s) - materials science , lasing threshold , substrate (aquarium) , optoelectronics , heterojunction , epitaxy , diode , laser , metalorganic vapour phase epitaxy , electrode , layer (electronics) , optics , nanotechnology , chemistry , wavelength , oceanography , physics , geology

The lasing characteristics of separate‐confinement‐heterostructure multi‐quantum‐well (SCH‐MQW) laser diodes (LDs) grown on InP templates bonded to a SiO 2 /Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven‐quantum‐well‐structured LD are grown by low‐pressure metal–organic vapor‐phase epitaxy. After the pulsed power supply of a high‐mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/SiO 2 /Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface‐electrode‐structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO 2 /Si substrate is compared with that of an LD grown on an InP/Si substrate.

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