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Optimizing Oxide Mixing Ratio for Achieving Energy‐Efficient Oxide Thin‐Film Transistors
Author(s) -
Moon Jaehyun,
Lee Jeong-Mu,
Lee Hwan-Jae,
Pi Jae-Eun,
Na Jeho,
Ahn Seong-Deok,
Kang Seung-Youl
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000750
Subject(s) - thin film transistor , oxide , materials science , atomic layer deposition , mixing (physics) , transistor , deposition (geology) , thin film , optoelectronics , analytical chemistry (journal) , layer (electronics) , nanotechnology , chemistry , voltage , electrical engineering , metallurgy , paleontology , physics , engineering , quantum mechanics , chromatography , sediment , biology
With an atomic layer deposition (ALD) method, mixed oxide thin films can be formed. This feature allows to experimentally deduce the mixing ratio of oxide components, which yields optimal device properties. Herein, all‐oxide bottom‐gate thin‐film transistors (TFTs) having binary ZnO x –InO y channel are fabricated. To find composition, which yields energy‐efficient TFTs of low subthreshold swing (SS) characteristics, mixed oxide channels of ZnO x and InO y are prepared, using a plasma‐enhanced ALD method and liquid precursors of diethyl zinc and 3‐(dimethylamino)propyl‐dimethyl indium. Channel comprised of ZnO x :InO y = 1:2 exhibits the best transfer characteristics with a highest field effect mobility and a lowest SS of 30.3 cm 2 V s −1 and 0.14 V dec −1 , respectively. The variation on SS is discussed quantitatively in terms of channel depletion and the quantitative description on oxygen vacancy.