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Effect of Halogen‐Doping on Properties of Bismuth Iodide (BiI 3 ) Optical Absorption Layer
Author(s) -
Wu Hao,
Huang Xianli,
Lv Jun,
Sheng Lei,
Gao Bin,
Jiang Cheng,
Wang Tao,
He Jianping
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000740
Subject(s) - doping , photocurrent , materials science , band gap , halogen , x ray photoelectron spectroscopy , analytical chemistry (journal) , scanning electron microscope , bismuth , thin film , photoelectric effect , absorption spectroscopy , chemistry , optics , nanotechnology , optoelectronics , chemical engineering , alkyl , engineering , metallurgy , composite material , physics , organic chemistry , chromatography
Bismuth tri‐iodide (BiI 3 ), a promising lead‐free photoelectric semiconductor material, is suitable for photovoltaic applications. Herein, the effect of halogen doping with bromine (Br) and chlorine (Cl) compounds on the morphology and photovoltaic performances of BiI 3 thin films is investigated. BiI 3− x X x films doped with halogens are prepared by vacuum thermal evaporation. Scanning electron microscope (SEM) shows that with the increase in doping ratio, the morphology of the thin film changes significantly, which is conducive to the contact with the cavity conduction layer. The bandgap increases from ≈1.75 to 1.78 eV (BiI 2.91 Cl 0.09 ) and 2.06 eV (BiI 2.91 Br 0.09 ) after doping. X‐ray photoelectron spectroscopy (XPS) shows that the band position of the two doped films increases, which is more conducive to the realization of band matching. The films with higher properties are obtained by doping halogens, and the maximum (BiI 2.91 X 0.09 ) photocurrent is twice of the minimum (BiI 2.97 X 0.03 ). The maximum photocurrent obtained by photocurrent I – T test is 0.043 Ma cm −2 (BiI 2.91 Cl 0.09 ) and 0.047 mA cm −2 (BiI 2.91 Br 0.09 ).