Premium
Optimization of Near‐Surface Quantum Well Processing
Author(s) -
Olausson Patrik,
Södergren Lasse,
Borg Mattias,
Lind Erik
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000720
Subject(s) - metalorganic vapour phase epitaxy , qubit , materials science , optoelectronics , epitaxy , nanowire , realization (probability) , transistor , metal , planar , nanotechnology , quantum , topology (electrical circuits) , computer science , electrical engineering , voltage , physics , mathematics , engineering , metallurgy , statistics , layer (electronics) , quantum mechanics , computer graphics (images)
Herein, an optimized process flow of near‐surface quantum well metal–oxide–semiconductor field‐effect transistors (MOSFETs) based on planar layers of metalorganic vapor‐phase epitaxy (MOVPE) grown In x Ga 1− x As is presented. It is found that by an optimized pre‐growth cleaning and post‐metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well‐defined network of lateral In x Ga 1− x As nanowires grown by selective area growth.