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Atomic Layer Deposition of AlN on Graphene
Author(s) -
Beshkova Milena,
Deminskyi Petro,
Hsu ChihWei,
Shtepliuk Ivan,
Avramova Ivalina,
Yakimova Rositsa,
Pedersen Henrik
Publication year - 2021
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202000684
Subject(s) - graphene , materials science , atomic layer deposition , x ray photoelectron spectroscopy , nanotechnology , thin film , fabrication , layer (electronics) , scanning electron microscope , chemisorption , graphene oxide paper , deposition (geology) , optoelectronics , chemical engineering , chemistry , composite material , catalysis , medicine , paleontology , alternative medicine , pathology , sediment , engineering , biology , biochemistry
Graphene is a material with great promise for several applications within electronics. However, using graphene in any such application requires its integration in a stack of thin layers of materials. The ideal structure of graphene has a fully saturated surface without any binding sites for chemisorption of growth species, making film growth on graphene highly challenging. Herein, an attempt to deposit very thin layers of AlN using an atomic layer deposition approach is reported. It is demonstrated using X‐ray photoelectron spectroscopy that Al–N are formed in the films deposited on graphene and shown by scanning electron microscopy and atomic force microscopy that the films have an island morphology. These results may be considered promising toward the development of a growth protocol for AlN on graphene and possibly also for 2D AlN fabrication.